گسیل میدانی الکترون

اطلاعات عمومی

• W. Zhu, ed. (2001). Vacuum Microelectronics. Wiley, New York.
• G.N. Fursey (2005). Field Emission in Vacuum Microelectronics. Kluwer Academic, New York. ISBN 0-306-47450-6.

نفوذ به میدان و خم شدن نوار (نیم‌رسانا)

• Seiwatz, Ruth; Green, Mino (1958). "Space Charge Calculations for Semiconductors". Journal of Applied Physics. 29 (7): 1034. Bibcode:1958JAP....29.1034S. doi:10.1063/1.1723358.
• A. Many, Y. Goldstein, and N.B. Grover, Semiconductor Surfaces (North Holland, Amsterdam, 1965).
• W. Mönsch, Semiconductor Surfaces and Interfaces (Springer, Berlin, 1995).
• Peng, Jie; Li, Zhibing; He, Chunshan; Chen, Guihua; Wang, Weiliang; Deng, Shaozhi; Xu, Ningsheng; Zheng, Xiao; Chen, GuanHua; Edgcombe, Chris J.; Forbes, Richard G. (2008). "The roles of apex dipoles and field penetration in the physics of charged, field emitting, single-walled carbon nanotubes". Journal of Applied Physics. AIP Publishing. 104 (1): 014310. arXiv:cond-mat/0612600. doi:10.1063/1.2946449. ISSN 0021-8979.

میدان گسیلیده بار-فضایی خلاء

• Barbour, J. P.; Dolan, W. W.; Trolan, J. K.; Martin, E. E.; Dyke, W. P. (1953). "Space-Charge Effects in Field Emission". Physical Review. 92 (1): 45–51. Bibcode:1953PhRv...92...45B. doi:10.1103/PhysRev.92.45.

گسیل میدان در دمای بالا و گسیل میدان-نوری

• Jensen, Kevin (2007). Electron emission physics. Advances in Imaging and Electron Physics. Vol. 149. San Diego: Academic Press. ISBN 978-0-12-374207-0. OCLC 647688316.

گسیل الکترون‌های پکشی میدان-القاء‌شده

• G.A. Mesyats, Explosive Electron Emission (URO Press, Ekaterinburg, 1998),